Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si
Autor: | Niikura, Kenta, Yamahata, Natsuki, Hoshi, Yusuke, Takamura, Tsukasa, Saito, Kimihiko, Konagai, Makoto, Sawano, Kentarou |
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Zdroj: | In Materials Science in Semiconductor Processing 15 August 2020 115 |
Databáze: | ScienceDirect |
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