Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si

Autor: Niikura, Kenta, Yamahata, Natsuki, Hoshi, Yusuke, Takamura, Tsukasa, Saito, Kimihiko, Konagai, Makoto, Sawano, Kentarou
Zdroj: In Materials Science in Semiconductor Processing 15 August 2020 115
Databáze: ScienceDirect