Impact of Si(100) doping methods on TiSi2 formation in vertical and horizontal FET structure areas with increasing aspect ratio
| Autor: | Hößler, Diana |
|---|---|
| Zdroj: | In Materials Science in Semiconductor Processing April 2020 109 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect