Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon

Autor: Qin, Yazhou, Wang, Peng, Jin, Shangjie, Cui, Can, Yang, Deren, Yu, Xuegong
Zdroj: In Materials Science in Semiconductor Processing 1 August 2019 98:65-69
Databáze: ScienceDirect