Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
| Autor: | Spera, M., Corso, D., Di Franco, S., Greco, G., Severino, A., Fiorenza, P., Giannazzo, F., Roccaforte, F. |
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| Zdroj: | In Materials Science in Semiconductor Processing April 2019 93:274-279 |
| Databáze: | ScienceDirect |
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