Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature
| Autor: | Grigelionis, Ignas, Jorudas, Justinas, Jakštas, Vytautas, Janonis, Vytautas, Kašalynas, Irmantas, Prystawko, Pawel, Kruszewski, Piotr, Leszczyński, Michal |
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| Zdroj: | In Materials Science in Semiconductor Processing April 2019 93:280-283 |
| Databáze: | ScienceDirect |
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