DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions
| Autor: | Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek |
|---|---|
| Zdroj: | In Materials Science in Semiconductor Processing February 2018 74:313-318 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect