Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing
Autor: | Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P. |
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Zdroj: | In Materials Science in Semiconductor Processing 15 June 2016 48:60-64 |
Databáze: | ScienceDirect |
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