Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

Autor: Payet, Anthony, Luce, Flavia Piegas, Curfs, Caroline, Mathieu, Benoît, Sklénard, Benoît, Barbé, Jean-Charles, Batude, Perrine, Joblot, Sylvain, Tavernier, Clément, Colombeau, Benjamin, Guissi, Sofiene, Martin-Bragado, Ignacio, Gergaud, Patrice
Zdroj: In Materials Science in Semiconductor Processing February 2016 42 Part 2:247-250
Databáze: ScienceDirect