Study of Ge–Sb–Te and Ge–Te cocktail sources to improve an efficiency of multi-line CVD for phase change memory
Autor: | Jeong, Jin Hwan, Park, Jun Hyuk, Lee, Yeong Min, Hwang, Uk, Kim, Hyung Keun, Kil, Deok Sin, Choi, Doo Jin |
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Zdroj: | In Materials Science in Semiconductor Processing December 2015 40:50-57 |
Databáze: | ScienceDirect |
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