Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors
| Autor: | Trinh, Thanh Thuy, Jang, Kyungsoo, Velumani, S., Dao, Vinh Ai, Yi, Junsin |
|---|---|
| Zdroj: | In Materials Science in Semiconductor Processing October 2015 38:50-56 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect