Optoelectronic properties of cubic BxInyGa1−x−yN alloys matched to GaN for designing quantum well Lasers: First-principles study within mBJ exchange potential
Autor: | Assali, A., Bouslama, M., Abid, H., Zerroug, S., Ghaffour, M., Saidi, F., Bouzaiene, L., Boulenouar, K. |
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Zdroj: | In Materials Science in Semiconductor Processing August 2015 36:192-203 |
Databáze: | ScienceDirect |
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