Optoelectronic properties of cubic BxInyGa1−x−yN alloys matched to GaN for designing quantum well Lasers: First-principles study within mBJ exchange potential

Autor: Assali, A., Bouslama, M., Abid, H., Zerroug, S., Ghaffour, M., Saidi, F., Bouzaiene, L., Boulenouar, K.
Zdroj: In Materials Science in Semiconductor Processing August 2015 36:192-203
Databáze: ScienceDirect