Investigations on phosphorus doped amorphous/nanocrystalline silicon films deposited by a filtered cathodic vacuum arc technique in the presence of hydrogen gas

Autor: Kesarwani, A.K., Panwar, O.S., Tripathi, R.K., Dalai, M.K., Chockalingam, Sreekumar
Zdroj: In Materials Science in Semiconductor Processing March 2015 31:1-9
Databáze: ScienceDirect