High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications
| Autor: | Ramezani, Zeinab, Orouji, Ali A., Rahimian, Morteza |
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| Zdroj: | In Materials Science in Semiconductor Processing February 2015 30:75-84 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect