Effect of annealing atmosphere on the electrical properties of nickel oxide/zinc oxide p–n junction grown by sol–gel technique

Autor: Jlassi, M., Sta, I., Hajji, M., Haoua, B. Ben, Ezzaouia, H.
Zdroj: In Materials Science in Semiconductor Processing October 2014 26:395-403
Databáze: ScienceDirect