Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
Autor: | Afifah Maheran, A.H., Menon, P.S., Ahmad, I., Shaari, S. |
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Zdroj: | In Materials Science in Semiconductor Processing January 2014 17:155-161 |
Databáze: | ScienceDirect |
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