Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack
| Autor: | Yu, T., Jin, C.G., Dong, Y.J., Cao, D., Zhuge, L.J., Wu, X.M. |
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| Zdroj: | In Materials Science in Semiconductor Processing October 2013 16(5):1321-1327 |
| Databáze: | ScienceDirect |
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