Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
| Autor: | Cordier, Y., Semond, F., Moreno, J-C., Frayssinet, E., Benbakhti, B., Cao, Z., Chenot, S., Nguyen, L., Tottereau, O., Soltani, A., Blary, K. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2009 12(1):16-20 |
| Databáze: | ScienceDirect |
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