Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics
| Autor: | Wadsworth, H.J., Bhattacharya, S., McNeill, D.W., Ruddell, F.H., Armstrong, B.M., Gamble, H.S., Denvir, D. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2006 9(4):685-689 |
| Databáze: | ScienceDirect |
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