Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(1 1 1) and Si(0 0 1) substrates
| Autor: | Wietler, Tobias F., Bugiel, Eberhard, Hofmann, Karl R. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2006 9(4):659-663 |
| Databáze: | ScienceDirect |
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