Vacancy-dioxygen centers in Si-rich SiGe alloys
| Autor: | Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Trypachko, M.O., Torres, V.J.B., Coutinho, J., Jones, R., Briddon, P.R., Abrosimov, N.V., Riemann, H. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2006 9(4):520-524 |
| Databáze: | ScienceDirect |
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