Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices

Autor: Kirste, L., Müller, S., Kiefer, R., Quay, R., Köhler, K., Herres, N.
Zdroj: In Materials Science in Semiconductor Processing 2006 9(1):8-14
Databáze: ScienceDirect