Gate-recessed delta-doping enhancement-mode Al 0.2Ga 0.8As/In 0.15Ga 0.85As PHEMTs using a new citric buffer etchant
| Autor: | Yarn, K.F., Liao, C.I., Wang, Y.H., Houng, M.P., Chure, M.C. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2005 8(4):550-554 |
| Databáze: | ScienceDirect |
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