Transport and absorption in strain-compensated Si/Si 1−xGe x multiple quantum well and cascade structures deposited on Si 0.5Ge 0.5 pseudosubstrates

Autor: Grützmacher, Detlev *, Tsujino, Soichiro, Falub, Claudiu, Borak, Alexander, Diehl, Laurent, Müller, Elisabeth, Sigg, Hans, Gennser, Ulf, Fromherz, Thomas, Meduňa, Moimir, Bauer, Günter, Faist, Jerome, Kermarrec, O.
Zdroj: In Materials Science in Semiconductor Processing 2005 8(1):401-409
Databáze: ScienceDirect