Low-temperature molecular beam epitaxy of Ge on Si
| Autor: | Leitão, J.P. *, Fonseca, A., Sobolev, N.A., Carmo, M.C., Franco, N., Sequeira, A.D., Burbaev, T.M., Kurbatov, V.A., Rzaev, M.M., Pogosov, A.O., Sibeldin, N.N., Tsvetkov, V.A., Lichtenberger, H., Schäffler, F. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2005 8(1):35-39 |
| Databáze: | ScienceDirect |
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