Modeling rhenium metallization of a silicon-rich (0 0 1) 6H-SiC surface

Autor: Wiff, D.R. *, Lampert, W.V., Eiting, C.J., McDaniel, G.Y., Glassford, K.M.
Zdroj: In Materials Science in Semiconductor Processing 2005 8(4):497-501
Databáze: ScienceDirect