Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

Autor: Oh, D.C *, Song, J.S, Chang, J.H, Takai, T, Hanada, T, Cho, M.W, Yao, T
Zdroj: In Materials Science in Semiconductor Processing 2003 6(5):567-571
Databáze: ScienceDirect
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