The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors
| Autor: | Cubaynes, F.N. *, Stolk, P.A., Verhoeven, J., Roozeboom, F., Woerlee, P.H. |
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| Zdroj: | In Materials Science in Semiconductor Processing 2001 4(4):351-356 |
| Databáze: | ScienceDirect |
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