Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
| Autor: | Bonoli, F., Godio, P., Borionetti, G., Falster, R. * |
|---|---|
| Zdroj: | In Materials Science in Semiconductor Processing 6 February 2001 4(1-3):145-148 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect