Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO 2
| Autor: | Lee, Y.K *, Maung Latt, Khin, Jaehyung, Kim, Lee, Kangsoo |
|---|---|
| Zdroj: | In Materials Science in Semiconductor Processing 2000 3(3):179-184 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect