Hydrogen passivation of Fe-related deep energy levels at a direct silicon-bonded (1 1 0)/(1 0 0) grain boundary

Autor: Yu, Xuegong a, ⁎, Li, Xiaoqiang a, Lei, Dong a, Yang, Deren a, Rozgonyi, George b
Zdroj: In Scripta Materialia 2011 64(7):653-656
Databáze: ScienceDirect