Atomic and electronic structures of inversion domain boundary in MgO doped AlN

Autor:	Kato, D., Feng, B., Nishi, T., Noritake, Y., Hishida, T., Shibata, N., Matsunaga, K., Ikuhara, Y.
Zdroj:	In Acta Materialia 1 December 2024 281
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect