Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Autor: Chouprik, Anastasia, Kondratyuk, Ekaterina, Mikheev, Vitalii, Matveyev, Yury, Spiridonov, Maxim, Chernikova, Anna, Kozodaev, Maxim G., Markeev, Andrey M., Zenkevich, Andrei, Negrov, Dmitrii
Zdroj: In Acta Materialia 1 February 2021 204
Databáze: ScienceDirect