Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

Autor: Tsoutsouva, M.G., Oliveira, V.A., Camel, D., Baruchel, J., Marie, B., Lafford, T.A.
Zdroj: In Acta Materialia 15 April 2015 88:112-120
Databáze: ScienceDirect