Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (1 1 1)A substrate
| Autor: | Mei, T., Li, H., Karunasiri, G., Fan, W.J., Zhang, D.H., Yoon, S.F., Yuan, K.H. |
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| Zdroj: | In Infrared Physics and Technology April 2007 50(2-3):119-123 |
| Databáze: | ScienceDirect |
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