The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

Autor: Buryi, M., Babin, V., Hubáček, T., Jarý, V., Hájek, F., Kuldová, K., Artemenko, A., Hospodková, A.
Zdroj: In Radiation Measurements September 2022 157
Databáze: ScienceDirect