A transport-kinetic model development for polysilicon chemical vapor deposition in a SiHCl3–H2 system
| Autor: | Zhao, Dan, Zhang, Qi, Chen, Fengyang, Yuan, Xingping, Yang, Ni, Xie, Gang, Wang, Jianguo, Hou, Yanqing, Yang, Bo |
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| Zdroj: | In International Journal of Thermal Sciences May 2024 199 |
| Databáze: | ScienceDirect |
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