Electrical uniformity analyses on 12-inch Si-based Hf0.5Zr0.5O2 ferroelectric capacitor devices by atomic layer deposition

Autor: Ding, Wen-Juan, Liu, Yu, Xiao, Zhi-Qiang, Gao, Li, Li, Yu-Chen, Zhu, Lin, Li, Xiang, Li, Wei-Min, Chen, Shuang, Li, Ai-Dong
Zdroj: In Progress in Natural Science: Materials International June 2024 34(3):598-605
Databáze: ScienceDirect
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