Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs
| Autor: | Lebedev, A.A., Kozlovski, V.V., Levinshtein, M.E., Ivanov, A.E., Strel'chuk, A.M., Zubov, A.V., Fursin, Leonid |
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| Zdroj: | In Radiation Physics and Chemistry December 2020 177 |
| Databáze: | ScienceDirect |
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