Capacitance–voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation-hard detectors
Autor: | Moloi, S.J., McPherson, M. |
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Zdroj: | In Radiation Physics and Chemistry April 2013 85:73-82 |
Databáze: | ScienceDirect |
Externí odkaz: |
Autor: | Moloi, S.J., McPherson, M. |
---|---|
Zdroj: | In Radiation Physics and Chemistry April 2013 85:73-82 |
Databáze: | ScienceDirect |
Externí odkaz: |