Study of structural changes caused by nanosecond laser annealing of Ge- and Sn-implanted Si crystal
| Autor: | Klinger, D., Żymierska, D., Minikayev, R., Nowakowska-Langier, K., Pelka, J.B., Nowicki, L., Kozankiewicz, B., Caliebe, W. |
|---|---|
| Zdroj: | In Radiation Physics and Chemistry 2011 80(10):1064-1067 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect