Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise
| Autor: | Koryazhkina, M.N., Filatov, D.O., Shishmakova, V.A., Shenina, M.E., Belov, A.I., Antonov, I.N., Kotomina, V.E., Mikhaylov, A.N., Gorshkov, O.N., Agudov, N.V., Guarcello, C., Carollo, A., Spagnolo, B. |
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| Zdroj: | In Chaos, Solitons and Fractals: the interdisciplinary journal of Nonlinear Science, and Nonequilibrium and Complex Phenomena September 2022 162 |
| Databáze: | ScienceDirect |
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