Stochastic model of memristor based on the length of conductive region

Autor: Agudov, N.V., Dubkov, A.A., Safonov, A.V., Krichigin, A.V., Kharcheva, A.A., Guseinov, D.V., Koryazhkina, M.N., Novikov, A.S., Shishmakova, V.A., Antonov, I.N., Carollo, A., Spagnolo, B.
Zdroj: In Chaos, Solitons and Fractals: the interdisciplinary journal of Nonlinear Science, and Nonequilibrium and Complex Phenomena September 2021 150
Databáze: ScienceDirect