Structural correlations at Si/Si 3N 4 interface and atomic stresses in Si/Si 3N 4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers

Autor: Bachlechner, Martina E. *, Kalia, Rajiv K., Nakano, Aiichiro, Omeltchenko, Andrey, Vashishta, Priya, Ebbsjö, Ingvar, Madhukar, Anupam, Zhao, Guang-Lin
Zdroj: In Journal of the European Ceramic Society 1999 19(13):2265-2272
Databáze: ScienceDirect