Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching

Autor: Sabataityt≐, J, Šimkien≐, I *, Bendorius, R.-A, Grigoras, K, Jasutis, V, Pačebutas, V, Tvardauskas, H, Naudžius, K
Zdroj: In Materials Science & Engineering C 2002 19(1):155-159
Databáze: ScienceDirect