Morphology and strongly enhanced photoluminescence of porous GaAs layers made by anodic etching
Autor: | Sabataityt≐, J, Šimkien≐, I *, Bendorius, R.-A, Grigoras, K, Jasutis, V, Pačebutas, V, Tvardauskas, H, Naudžius, K |
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Zdroj: | In Materials Science & Engineering C 2002 19(1):155-159 |
Databáze: | ScienceDirect |
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