Passivation effect of hydrogen and oxygen on the carrier capture of vacancies in 4H-SiC
| Autor: | Yu, Xueqiang, Xu, Xiaodong, Jiang, Hao, Wei, Yadong, Ying, Tao, Li, Weiqi, Lv, Gang, Geng, Hongbin, Huang, Yuanting, Liu, Zhongli, Yang, Jianqun, Li, Xingji |
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| Zdroj: | In Computational Materials Science January 2025 246 |
| Databáze: | ScienceDirect |
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