Low-energy P + ion channeling and implantation into Si(1 1 0), SiC(1 1 0), GaP(1 1 0) and GaAs(1 1 0)

Autor: Rasulov, A.M., Dzhurakhalov, A.A.
Zdroj: In Computational Materials Science 2005 33(1):148-152
Databáze: ScienceDirect