Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

Autor: Misiuk, A a, ∗, Bak-Misiuk, J b, Antonova, I.V c, Raineri, V d, Romano-Rodriguez, A e, Bachrouri, A e, Surma, H.B f, Ratajczak, J a, Katcki, J a, Adamczewska, J b, Neustroev, E.P c
Zdroj: In Computational Materials Science 2001 21(4):515-525
Databáze: ScienceDirect
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