Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J0 of ∼6 fA/cm2
| Autor: | Xing, Haiyang, Liu, Zunke, Yang, Zhenhai, Liao, Mingdun, Wu, Qinqin, Lin, Na, Liu, Wei, Ding, Chuanfan, Zeng, Yuheng, Yan, Baojie, Ye, Jichun |
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| Zdroj: | In Solar Energy Materials and Solar Cells 1 August 2023 257 |
| Databáze: | ScienceDirect |
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