Heterojunction interface passivation strategy for Cu(In1-x,Gax)Se2 solar cell with nano-level engineering of Zn-based buffer structure via atomic layer deposition method

Autor: Shin, Sang Su, Kim, Kihwan, Yoo, Jinsu, Kim, Ji Hye, Ahn, Seungkyu, Cho, Ara, Kim, Dongryeol, Jo, Yonghee, Jeong, Inyoung, Shin, Donghyeop, Cho, Jun-Sik, Yun, Jae Ho, Park, Jonghoo, Park, Joo Hyung
Zdroj: In Solar Energy Materials and Solar Cells 1 June 2021 224
Databáze: ScienceDirect