The use of HfO2 in a point contact concept for front interface passivation of Cu(In,Ga)Se2 solar cells

Autor: Löckinger, Johannes, Nishiwaki, Shiro, Bissig, Benjamin, Degutis, Giedrius, Romanyuk, Yaroslav E., Buecheler, Stephan, Tiwari, Ayodhya N.
Zdroj: In Solar Energy Materials and Solar Cells 15 June 2019 195:213-219
Databáze: ScienceDirect